• DocumentCode
    1348317
  • Title

    Gallium arsenide solid state travelling wave amplifier at 8 GHz

  • Author

    Thompson, Jared J. ; Taylor, M.R.S. ; Thompson, A.M. ; Beaumont, S.P. ; Apsley, N.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
  • Volume
    27
  • Issue
    6
  • fYear
    1991
  • fDate
    3/14/1991 12:00:00 AM
  • Firstpage
    516
  • Lastpage
    518
  • Abstract
    A solid state travelling wave amplifier using interdigitated DC isolated fingers has been fabricated on low doped GaAs using electron beam lithography and has been shown to give 13 dB/mm microwave gain at 7.95 GHz with an applied transverse DC field of 1.5 kV/cm.
  • Keywords
    III-V semiconductors; electron beam lithography; gallium arsenide; microwave amplifiers; solid-state microwave circuits; 7.95 GHz; GaAs; applied transverse DC field; electron beam lithography; interdigitated DC isolated fingers; microwave gain; solid state travelling wave amplifier;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19910324
  • Filename
    84737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1348317