Novel cleaning solutions for polysilicon film post chemical mechanical polishing

Author

Pan, Tung Ming ; Lei, Tan Fu ; Chen, Chao Chyi ; Chao, Tien Sheng ; Liaw, Ming Chi ; Yang, Wen Lu ; Tsai, Ming Shih ; Lu, C.P. ; Chang, W.H.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

21

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

338

Lastpage

340

Abstract

Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) alkaline aqueous solution to enhance removal of metallic and organic contamination. From the experimental result, it is found that the particle and metal removal efficiency and the electrical characteristics are significantly improved for post-CMP cleaning.

Keywords

elemental semiconductors; semiconductor technology; semiconductor thin films; silicon; surface cleaning; surface contamination; EDTA; H/sub 2/O; NH/sub 4/OH; Si; TMAH; chelating agent; cleaning solutions; diluted ammonium hydroxide alkaline aqueous solution; electrical characteristics improvement; ethylene diamine tetra acetic acid; metallic contamination; organic contamination; poly-Si film; polysilicon film; post chemical mechanical polishing; post-CMP cleaning; post-CMP process; removal efficiency; surfactant tetra methyl ammonium hydroxide; Brushes; Chaos; Chemicals; Cleaning; Electric variables; Goniometers; Impurities; Pollution measurement; Silicon; Surface contamination;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.847373

Filename

847373