Title :
High-voltage lateral RESURF MOSFETs on 4H-SiC
Author :
Chatty, K. ; Banerjee, S. ; Chow, T.P. ; Gutmann, R.J.
Author_Institution :
Center for Integrated Electron. & Electron. Manuf., Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
High-voltage lateral RESURF MOSFETs have been fabricated on 4H-SiC with both nitrogen and phosphorus as source/drain and RESURF region implants. Blocking voltages as high as 1200 V and specific on-resistances of 4 /spl Omega/ cm/sup 2/ have been obtained, with the high on-resistance attributed to poor inversion layer mobility. Phosphorus is most appropriate for the source/drain implants due to low sheet resistance and contact resistance with low temperature anneals. However, poor activation of low dose phosphorus implants at 1200/spl deg/C makes nitrogen the preferred choice for the RESURF region.
Keywords :
carrier mobility; inversion layers; ion implantation; nitrogen; phosphorus; power MOSFET; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; 1200 C; 1200 V; 4H-SiC; HV lateral RESURF MOSFET; N implant; RESURF region implant; SiC:N; SiC:P; blocking voltages; contact resistance; high-voltage MOSFET; inversion layer mobility; low dose P implants; sheet resistance; source/drain implants; specific on-resistances; Annealing; Contact resistance; Electric resistance; Implants; MOS devices; MOSFET circuits; Nitrogen; Plasma sources; Silicon carbide; Voltage;
Journal_Title :
Electron Device Letters, IEEE
