Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides

Author

Wu, Ernest Y. ; Harmon, David L. ; Han, Liang-Kai

Author_Institution

Microelectron. Div., IBM Corp., Essex Junction, VT, USA

Volume

21

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

362

Lastpage

364

Abstract

We report that voltage acceleration of time- or charge-to-breakdown is insensitive to temperature variations over a wide range of temperature (30 to 200/spl deg/C) for oxides below 3 nm, regardless of oxide process, injection polarity or device type (NFET, PFET). Based on this observation, an essentially universal, non-Arrhenius temperature dependence for ultrathin oxide is obtained by a natural normalization scheme. The consequences of these findings for reliability projection are discussed.

Keywords

MOS capacitors; MOSFET; dielectric thin films; electric potential; semiconductor device breakdown; semiconductor device reliability; 3 nm; 30 to 200 C; charge-to-breakdown; gate dielectric; natural normalization scheme; nonArrhenius temperature dependence; oxide breakdown; reliability projection; temperature variations; time-to-breakdown; ultrathin oxides; voltage acceleration; voltage dependence; Acceleration; Breakdown voltage; Capacitors; Databases; Dielectrics; Electric breakdown; Quantum mechanics; Substrates; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.847381

Filename

847381