DocumentCode
1348492
Title
Single-mode InGaAs-GaAs laser diodes operating at 980 nm
Author
Plano, W.E. ; Welch, D.F. ; Scifres, D.
Volume
27
Issue
6
fYear
1991
fDate
3/14/1991 12:00:00 AM
Firstpage
539
Lastpage
541
Abstract
Data are presented describing the operation of single-transverse single-longitudinal mode strained-layer InGaAs laser diodes operating at lambda =980 nm. These diodes exhibit single-transverse mode behaviour to beyond 210 mW continuous wave (CW) and single-longitudinal mode behaviour to beyond 150 mW CW. The maximum output power is approximately 350 mW CW. The threshold current of these lasers is approximately 10 mA, with a differential quantum efficiency of 85%. The total efficiency of these diodes exceeds 50% at an output power of 100 mW.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 100 to 350 mW; 85 percent; 980 nm; InGaAs-GaAs laser diodes; differential quantum efficiency; maximum output power; single-longitudinal mode; single-transverse mode behaviour; strained-layer; threshold current; total efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19910339
Filename
84751
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