Title :
Single-mode InGaAs-GaAs laser diodes operating at 980 nm
Author :
Plano, W.E. ; Welch, D.F. ; Scifres, D.
fDate :
3/14/1991 12:00:00 AM
Abstract :
Data are presented describing the operation of single-transverse single-longitudinal mode strained-layer InGaAs laser diodes operating at lambda =980 nm. These diodes exhibit single-transverse mode behaviour to beyond 210 mW continuous wave (CW) and single-longitudinal mode behaviour to beyond 150 mW CW. The maximum output power is approximately 350 mW CW. The threshold current of these lasers is approximately 10 mA, with a differential quantum efficiency of 85%. The total efficiency of these diodes exceeds 50% at an output power of 100 mW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 100 to 350 mW; 85 percent; 980 nm; InGaAs-GaAs laser diodes; differential quantum efficiency; maximum output power; single-longitudinal mode; single-transverse mode behaviour; strained-layer; threshold current; total efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19910339
