Title :
A single-stage three-terminal heterojunction bipolar transistor optoelectronic mixer
Author :
Betser, Yoram ; Ritter, Dan ; Liu, C.P. ; Seed, A.J. ; Madjar, A.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
4/1/1998 12:00:00 AM
Abstract :
A high-conversion gain three-terminal heterojunction bipolar transistor (HBT) optoelectronic mixer has been demonstrated. The maximum obtained intrinsic conversion gain was 10.4 dB. The mixing performance was measured as a function of the dc bias of the device and local oscillator power level. A SPICE-based large signal model was employed to simulate the device. The main nonlinear effects which contributed to the mixing process were the voltage dependence of the dynamic emitter resistance, and the variation of the current gain in the saturation regime
Keywords :
SPICE; bipolar transistor circuits; integrated optoelectronics; mixers (circuits); optical communication equipment; subcarrier multiplexing; 10.4 dB; SPICE-based large signal model; current gain; dc bias; dynamic emitter resistance; high-conversion gain three-terminal heterojunction bipolar transistor; local oscillator power level; main nonlinear effects; maximum obtained intrinsic conversion gain; mixing performance; mixing process; saturation regime; single-stage three-terminal heterojunction bipolar transistor optoelectronic mixer; voltage dependence; Heterojunction bipolar transistors; Indium phosphide; Nonlinear optics; Optical mixing; Optical modulation; Optical saturation; Power measurement; RF signals; Radio frequency; Stimulated emission;
Journal_Title :
Lightwave Technology, Journal of
