Improved Resistive Switching of Textured ZnO Thin Films Grown on Ru Electrodes

Author

Liu, Zi-Jheng ; Chou, Jen-Chun ; Wei, Shih-Yuan ; Gan, Jon-Yiew ; Yew, Tri-Rung

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

Volume

32

Issue

12

fYear

2011

Firstpage

1728

Lastpage

1730

Abstract

This letter investigates the unipolar resistive switching behaviors of sputtered ZnO thin films by changing the electrode combinations of Pt and Ru, creating four sandwich structures of Pt/ZnO/Pt, Pt/ZnO/Ru, Ru/ZnO/Pt, and Ru/ZnO/Ru. Only the Pt/ZnO/Ru devices in this letter achieved favorable resistive switching characteristics, including good endurance performance, narrow distributions in switching parameters, high on/off ratio (>; 150), and clear difference between the set and reset voltages (~1 V). This may be attributed to the low oxygen affinity of Pt electrodes and the strong c-axis texture of ZnO thin films grown on Ru electrodes.

Keywords

electrical resistivity; electrodes; platinum; ruthenium; sandwich structures; semiconductor thin films; zinc compounds; Pt-ZnO-Pt; Pt-ZnO-Ru; Ru electrode; Ru-ZnO-Pt; Ru-ZnO-Ru; ZnO; sandwich structure; sputtered ZnO thin films; textured ZnO thin film; unipolar resistive switching; Anodes; Resistance; Silicon; Switches; Voltage measurement; Zinc oxide; Nonvolatile memory; ZnO; resistance random access memory; resistive switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2167710

Filename

6043863