DocumentCode
1348633
Title
HiPIMS Ion Energy Distribution Measurements in Reactive Mode
Author
Jouan, Pierre-Yves ; Le Brizoual, Laurent ; Ganciu, Mihaï ; Cardinaud, Christophe ; Tricot, Sylvain ; Djouadi, Mohamed-Abdou
Author_Institution
Inst. des Mater. Jean Rouxel, Univ. of Nantes, Nantes, France
Volume
38
Issue
11
fYear
2010
Firstpage
3089
Lastpage
3094
Abstract
In this paper, mass spectrometry was used to measure the ion energy distributions of the main species during the sputtering of an aluminum target in a reactive Ar + N2 mixture. Both conventional magnetron sputtering (dc) and high-power impulse magnetron sputtering (HiPIMS) were used. It appears that, in the HiPIMS, N+ and Al+ ions are significantly more energetic (up to 70 eV) than in the dc (<;40 eV). Furthermore, the HiPIMS Al+ signal is two orders of magnitude greater than in the dc, and time-resolved measurements indicate that most of the ion flux hits the substrate during the OFF time of the impulse sequence.
Keywords
III-V semiconductors; aluminium compounds; mass spectroscopy; semiconductor growth; semiconductor thin films; sputter deposition; time resolved spectra; AlN; HiPIMS ion energy distribution measurements; high-power impulse magnetron sputtering; impulse sequence; ion flux; magnetron sputtering; mass spectrometry; reactive mode; sputtering; time-resolved measurements; Aluminum nitride; Discharges; Plasma measurements; Spectrometry; Sputtering; Substrates; Aluminum nitride; high-power impulse magnetron sputtering (HiPIMS); mass spectrometry;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/TPS.2010.2073688
Filename
5599879
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