Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection

Author

Chen, Wen-Yi ; Rosenbaum, Elyse ; Ker, Ming-Dou

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

12

Issue

1

fYear

2012

fDate

3/1/2012 12:00:00 AM

Firstpage

10

Lastpage

14

Abstract

Diode-triggered silicon-controlled rectifiers (DTSCRs) are used for on-chip electrostatic discharge protection. The role of the trigger diode string in determining the transient voltage overshoot is investigated using a very fast transmission line pulse. A DTSCR containing only poly-bound trigger diodes has a voltage overshoot of just 1.5 V at 7 A, which is significantly less than what is found with STI-bound diodes. A DTSCR with only STI-bound trigger diodes has a lower leakage current. Therefore, DTSCRs with different trigger diode configurations may be suitable for different applications, e.g., high speed or low power.

Keywords

electrostatic discharge; leakage currents; semiconductor device models; semiconductor diodes; thyristors; transmission lines; trigger circuits; CDM ESD protection; STI-bound trigger diodes; charged device model; current 7 A; diode-triggered silicon-controlled rectifier; fast transmission line pulse; leakage current; on-chip electrostatic discharge protection; poly-bound trigger diodes; reduced voltage overshoot; transient voltage overshoot; trigger diode string; voltage 1.5 V; Current measurement; Earth Observing System; Electrostatic discharge; Leakage current; Logic gates; Thyristors; Transient analysis; Charge device model (CDM); electrostatic discharge (ESD); silicon-controlled rectifier (SCR);

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2011.2171487

Filename

6043867