Photovoltaic Effects of InGaN/GaN Double Heterojunctions With p-GaN Nanorod Arrays

The p-GaN/In_0.06Ga_0.94N/n-GaN double heterojunctional solar cells with solely formed nanorod arrays of p-GaN have been fabricated on sapphire (0001). The p-GaN nanorod arrays are demonstrated to significantly reduce the reflectance loss of light incidence. A stress relief of the intrinsic InGaN region is observed from high-resolution X-ray diffraction analyses. The electroluminescence emission peak is blue shifted compared with the conventional solar cells. These results are reflected by the spectral dependences of the external quantum efficiency (EQE) that show a shorter cutoff wavelength response. The maximum EQE value is 55.5%, which is an enhancement of 10% as compared with the conventional devices.