DocumentCode
1349072
Title
Stability of Amorphous Silicon Solar Cells
Author
Staebler, David L.
Author_Institution
RCA Laboratories; Princeton, NJ 08540 USA.
Issue
3
fYear
1982
Firstpage
281
Lastpage
284
Abstract
The present situation on the stability of amorphous silicon solar cells is discussed. Impurity diffusion is not expected to be a problem in normal cell operation. Interface contamination degrades Schottky barrier or MIS cells that are exposed to water vapor, but has no influence on p-i-n or n-i-p cells. Optically induced changes in the amorphous silicon have an influence, depending on cell structure and preparation conditions. Preliminary results on ¿ 5% efficiency n-i-p cells suggest that the efficiency will degrade by only 20% in 20 years of sunlight.
Keywords
Amorphous silicon; Contamination; Degradation; Impurities; Indium tin oxide; Optical films; PIN photodiodes; Photovoltaic cells; Stability; Water pollution; Amorphous silicon; Cell stability; Optically-induced change;
fLanguage
English
Journal_Title
Reliability, IEEE Transactions on
Publisher
ieee
ISSN
0018-9529
Type
jour
DOI
10.1109/TR.1982.5221338
Filename
5221338
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