• DocumentCode
    1349072
  • Title

    Stability of Amorphous Silicon Solar Cells

  • Author

    Staebler, David L.

  • Author_Institution
    RCA Laboratories; Princeton, NJ 08540 USA.
  • Issue
    3
  • fYear
    1982
  • Firstpage
    281
  • Lastpage
    284
  • Abstract
    The present situation on the stability of amorphous silicon solar cells is discussed. Impurity diffusion is not expected to be a problem in normal cell operation. Interface contamination degrades Schottky barrier or MIS cells that are exposed to water vapor, but has no influence on p-i-n or n-i-p cells. Optically induced changes in the amorphous silicon have an influence, depending on cell structure and preparation conditions. Preliminary results on ¿ 5% efficiency n-i-p cells suggest that the efficiency will degrade by only 20% in 20 years of sunlight.
  • Keywords
    Amorphous silicon; Contamination; Degradation; Impurities; Indium tin oxide; Optical films; PIN photodiodes; Photovoltaic cells; Stability; Water pollution; Amorphous silicon; Cell stability; Optically-induced change;
  • fLanguage
    English
  • Journal_Title
    Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9529
  • Type

    jour

  • DOI
    10.1109/TR.1982.5221338
  • Filename
    5221338