Title :
Simple and Accurate Circuit Simulation Model for SiC Power MOSFETs
Author :
Arribas, Alejandro Pozo ; Fei Shang ; Krishnamurthy, Mahesh ; Shenai, Krishna
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
Simple and accurate circuit simulation models for high-voltage silicon carbide power MOSFETs and Schottky barrier diodes are presented and validated. The models are physics-based and consist of minimal number of model parameters that can be easily extracted from simple static I-V and C-V measurements. The models are used in a buck-boost bidirectional dc-dc converter, with and without an antiparallel Schottky diode. The efficiency of the converter was analyzed for synchronous and nonsynchronous operation of the switches. An optimal selection of the antiparallel Schottky diode is proposed to minimize the cost of the converter without compromising its efficiency.
Keywords :
DC-DC power convertors; Schottky diodes; circuit simulation; power MOSFET; semiconductor device models; silicon compounds; wide band gap semiconductors; C-V measurements; I-V measurements; SiC; antiparallel Schottky barrier diode; buck-boost bidirectional DC-DC converter; circuit simulation model; high-voltage silicon carbide power MOSFETs; model parameters; nonsynchronous operation; physics-based models; switches; synchronous operation; Insulated gate bipolar transistors; Integrated circuit modeling; MOSFET; Mathematical model; Schottky diodes; Semiconductor device modeling; Silicon carbide; Circuit model; Schottky diode; dc-dc converter; efficiency; power MOSFET; silicon carbide (SiC); synchronous operation; synchronous operation.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2384277
