Low-distortion CMOS complementary class E RF tuned power amplifiers

Author

Tu, Steve Hung-Lung ; Toumazou, Chris

Author_Institution

Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK

Volume

47

Issue

5

fYear

2000

fDate

5/1/2000 12:00:00 AM

Firstpage

774

Lastpage

779

Abstract

A low distortion tuned power amplifier which is suitable for integrated circuit implementation is proposed. The amplifier is a complementary class-E tuned power amplifier because of both P-type and N-type transistors are employed to achieve a highly symmetrical topology, thereby reducing the significant distortion in the output signal of the conventional single-ended class-E power amplifier. In this paper, a complementary class-E power amplifier is presented together with HSPICE simulation results

Keywords

CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; electric distortion; equivalent circuits; network analysis; power integrated circuits; 2 to 2.5 GHz; CMOS power amplifiers; HSPICE simulation; RF tuned power amplifiers; complementary class-E power amplifiers; highly symmetrical topology; integrated circuit implementation; low-distortion power amplifiers; Linear systems; Mirrors; Operational amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Solid state circuits; Switches; Switching circuits; Voltage;

fLanguage

English

Journal_Title

Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on

Publisher

ieee

ISSN

1057-7122

Type

jour

DOI

10.1109/81.847887

Filename

847887