Novel a-Si:H AMOLED Pixel Circuit to Ameliorate OLED Luminance Degradation by External Detection

Author

Lin, Chih-Lung ; Hung, Chia-Che ; Chang, Wen-Yen ; Chou, Kuan-Wen ; Chuang, Cheng-Yan

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

32

Issue

12

fYear

2011

Firstpage

1716

Lastpage

1718

Abstract

This letter presents a novel hydrogenated amorphous silicon (a-Si:H) active-matrix organic light-emitting diode (OLED) pixel circuit that compensates for the threshold voltage shift of TFT using an internal compensated structure and reduces luminance decay by external detection method, based on the interdependence between the luminance degradation of OLED and the decrease in current under constant voltage bias stress. Experimental results demonstrate that the luminance of the OLED device with the proposed external detection method is more stable than that with the conventional 2T1C pixel circuit.

Keywords

organic light emitting diodes; thin film transistors; OLED luminance degradation; TFT; a-Si:H AMOLED pixel circuit; active-matrix organic light-emitting diode; external detection; hydrogenated amorphous silicon; Active matrix organic light emitting diodes; Current measurement; Degradation; Thin film transistors; Threshold voltage; Voltage measurement; Active-matrix organic light-emitting diode (AMOLED); external detection; hydrogenated amorphous silicon (a-Si:H);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2011.2167592

Filename

6044701