A case study of low-noise amplifier design for 2.65GHz wireless system using MOSFET BSIM4 series and CNTFET

Author

Bhowal, Sayak

Author_Institution

Electron. & Telecommun. Eng. Dept., Jadavpur Univ., Kolkata, India

fYear

2014

fDate

1-2 Feb. 2014

Firstpage

1

Lastpage

6

Abstract

Low power LNA design for high frequency wireless application is one of the challenging tasks in present scenario of VLSI. The major components of noise in amplifier are incorporated into flicker noise and thermal noise. In this paper the main concentration is given on a comparative study for a single ended LNA in the platform of 130nm to 22nm models of BSIM4 series and Verilog based CNTFET. Nose figure, reflection coefficients and gain of LNA are taken as a subject of matter for the comparison.

Keywords

MOSFET circuits; carbon nanotube field effect transistors; flicker noise; integrated circuit design; low noise amplifiers; low-power electronics; thermal noise; MOSFET BSIM4 series; VLSI; Verilog based CNTFET; flicker noise; frequency 2.65 GHz; high frequency wireless application; low power LNA design; low-noise amplifier design; nose figure; reflection coefficients; size 130 nm to 22 nm; thermal noise; CNTFETs; Inductors; Integrated circuit modeling; Noise; Noise figure; Reflection coefficient; Wireless communication; Inductor Degenerated; Reflection Coefficient; Resonant frequency; Scattering Parameter; Transmission Gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Automation, Control, Energy and Systems (ACES), 2014 First International Conference on

Conference_Location

Hooghy

Print_ISBN

978-1-4799-3893-3

Type

conf

DOI

10.1109/ACES.2014.6807985

Filename

6807985