• DocumentCode
    1349632
  • Title

    An error indicator and automatic adaptive meshing for electrostatic boundary element simulations

  • Author

    Bächtold, Martin ; Emmenegger, Markus ; Korvink, Jan G. ; Baltes, Henry

  • Author_Institution
    Phys. Electron. Lab., Zurich, Switzerland
  • Volume
    16
  • Issue
    12
  • fYear
    1997
  • fDate
    12/1/1997 12:00:00 AM
  • Firstpage
    1439
  • Lastpage
    1446
  • Abstract
    Accurate electrostatic simulations are required for the analysis of micro electromechanical systems (MEMS) and interconnects in very large scale integration (VLSI) design. Typical simulations involve complex three-dimensional (3-D) geometries together with various dielectric materials, conductors, and boundary conditions. The boundary element method is well suited for such computations. For highly accurate solutions, the meshing of the geometry becomes increasingly important. A scheme is presented which allows generating an optimal mesh automatically based on a coarse initial discretization, e.g., a CAD model. An error indicator derived from boundary integral equations monitors the solution accuracy in each boundary element. H-type or p-type mesh refinement is applied to areas which contribute strongly to the overall error. The method applies to both two-dimensional (2-D) and 3-D simulations containing elements of various orders and shapes. The generated refined meshes result in significantly higher solution accuracy for a given simulation size
  • Keywords
    VLSI; boundary integral equations; boundary-elements methods; digital simulation; electrostatics; integrated circuit interconnections; micromechanical devices; 2D simulations; 3D geometries; CAD model; VLSI; automatic adaptive meshing; coarse initial discretization; electrostatic boundary element simulations; error indicator; integral equations; interconnects; micro electromechanical systems; optimal mesh; simulation size; solution accuracy; Analytical models; Computational modeling; Conducting materials; Dielectric materials; Electromechanical systems; Electrostatic analysis; Geometry; Micromechanical devices; Solid modeling; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.664226
  • Filename
    664226