• DocumentCode
    1349739
  • Title

    Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS

  • Author

    Atkinson, Nicholas M. ; Ahlbin, Jonathan R. ; Witulski, Arthur F. ; Gaspard, Nelson J. ; Holman, W. Timothy ; Bhuva, Bharat L. ; Zhang, Enxia X. ; Chen, Li ; Massengill, Lloyd W.

  • Author_Institution
    Vanderbilt Univ., Nashville, TN, USA
  • Volume
    58
  • Issue
    6
  • fYear
    2011
  • Firstpage
    2578
  • Lastpage
    2584
  • Abstract
    Heavy-ion experiments on spatially isolated inverters and densely populated inverters demonstrate the effects of transistor density on single-event (SE) transients in bulk CMOS. Increased transistor density reduces SE cross section dramatically while having little impact on transient pulse width.
  • Keywords
    CMOS integrated circuits; invertors; bulk CMOS; charge sharing effect; densely populated inverters; heavy-ion experiments; single-event transients; spatially isolated inverters; transient pulse width; transistor density effect; Inverters; MOSFET circuits; MOSFETs; Pulse measurements; Radiation effects; Single event transient; CMOS scaling; Charge sharing; single event; single-event transient; soft error;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2011.2168425
  • Filename
    6044737
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1349739