Title :
Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS
Author :
Atkinson, Nicholas M. ; Ahlbin, Jonathan R. ; Witulski, Arthur F. ; Gaspard, Nelson J. ; Holman, W. Timothy ; Bhuva, Bharat L. ; Zhang, Enxia X. ; Chen, Li ; Massengill, Lloyd W.
Author_Institution :
Vanderbilt Univ., Nashville, TN, USA
Abstract :
Heavy-ion experiments on spatially isolated inverters and densely populated inverters demonstrate the effects of transistor density on single-event (SE) transients in bulk CMOS. Increased transistor density reduces SE cross section dramatically while having little impact on transient pulse width.
Keywords :
CMOS integrated circuits; invertors; bulk CMOS; charge sharing effect; densely populated inverters; heavy-ion experiments; single-event transients; spatially isolated inverters; transient pulse width; transistor density effect; Inverters; MOSFET circuits; MOSFETs; Pulse measurements; Radiation effects; Single event transient; CMOS scaling; Charge sharing; single event; single-event transient; soft error;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2168425
