Title :
Modeling Low Dose Rate Effects in Shallow Trench Isolation Oxides
Author :
Esqueda, Ivan S. ; Barnaby, Hugh J. ; Adell, Philippe C. ; Rax, Bernard G. ; Hjalmarson, Harold P. ; McLain, Michael L. ; Pease, Ronald L.
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Low dose rate experiments on field-oxide-field-effect-transistors (FOXFETs) fabricated in a 90 nm CMOS technology indicate that there is a dose rate enhancement factor (EF) associated with radiation-induced degradation. One dimensional (1-D) numerical calculations are used to investigate the key mechanisms responsible for the dose rate dependent buildup of radiation-induced defects in shallow trench isolation (STI) oxides. Calculations of damage EF indicate that oxide thickness, distribution of hole traps and hole capture cross-section affect dose rate sensitivity. The dose rate sensitivity of STI oxides is compared with the sensitivity of bipolar base oxides using model calculations.
Keywords :
CMOS integrated circuits; field effect transistors; hole traps; numerical analysis; CMOS technology; FOXFET; bipolar base oxides; dose rate enhancement factor; dose rate sensitivity; field-oxide-field-effect-transistors; hole capture cross-section; hole trap distribution; model calculations; modeling low dose rate effects; one dimensional numerical calculations; radiation-induced defects; radiation-induced degradation; shallow trench isolation oxides; Bipolar transistors; CMOS integrated circuits; CMOS technology; Charge carrier processes; Degradation; Sensitivity; Silicon compounds; Bipolar; CMOS; dose rate; enhanced low dose rate sensitivity (ELDRS); interface traps; shallow trench isolation (STI); silicon dioxide; total ionizing dose (TID);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2168569
