Title :
Supply voltage scaling for temperature insensitive CMOS circuit operation
Author :
Bellaouar, A. ; Fridi, A. ; Elmasry, M.I. ; Itoh, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fDate :
3/1/1998 12:00:00 AM
Abstract :
CMOS supply voltage scaling for temperature independent gate delay is investigated. It is found that the optimum supply voltage which results in temperature insensitive operation is proportional to the threshold voltage. This voltage enables a single battery cell operation. CMOS technologies with 0.35- and 0.25-μm size features are used as examples in this study
Keywords :
CMOS digital integrated circuits; VLSI; delays; integrated circuit design; 0.25 micron; 0.35 micron; digital circuits; feature size; gate delay; single battery cell operation; supply voltage scaling; temperature insensitive CMOS circuit; threshold voltage; Batteries; CMOS technology; Circuit simulation; Delay effects; Dynamic voltage scaling; Equations; Power dissipation; Power supplies; Temperature; Threshold voltage;
Journal_Title :
Circuits and Systems II: Analog and Digital Signal Processing, IEEE Transactions on
