DocumentCode :
1349852
Title :
Comparison of Memory Chip Organizations vs Reliability in Virtual Memories
Author :
Matick, Richard E.
Author_Institution :
IBM Research Center. Yorktown Heights, NY 10598 USA.
Issue :
1
fYear :
1983
fDate :
4/1/1983 12:00:00 AM
Firstpage :
48
Lastpage :
58
Abstract :
Random access memory organizations typically are chosen for maximum reliability, based on the operation of the memory box itself without concern for the remainder of the computing system. This had led to widespread use of the 1-bit-per-chip, or related organization which uses error correcting codes to minimize the effects of failures occurring in some basic unit such as a word or double word (32 to 64 bits). Such memory boxes are used quite commonly in paged virtual memory systems where the unit for protection is really a page (4K bytes), or in a cache where the unit for protection is a block (32 to 128 bytes), not a double word. With typical high density memory chips and typical ranges of failure rates, the 1-bit-per-chip organization can often maximize page failures in a virtual memory system. For typical cases, a paged virtual memory using a page-per-chip organization can substantially improve reliability, and is potentially far superior to other organizations. This paper first describes the fundamental considerations of organization for memory systems and demonstrates the underlying problems with a simplified case. Then the reliability in terms of lost pages per megabyte due to hard failures over any time period is analyzed for a paged virtual memory organized in both ways. Normalized curves give the lost pages per Mbyte as a function of failure rate and accumulated time. Assuming reasonable failure rates can be achieved, the page-per-chip organization can be 10 to 20 times more reliable than a 1-bit-per-chip scheme.
Keywords :
Availability; Design engineering; Error correction codes; Failure analysis; Manufacturing; Protection; Random access memory; Reliability engineering; 1-bit-per-chip; 1-page-per-chip; Chip failures; Memory reliability; Virtual memory reliability;
fLanguage :
English
Journal_Title :
Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9529
Type :
jour
DOI :
10.1109/TR.1983.5221474
Filename :
5221474
Link To Document :
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