Title :
Dual-threshold voltage techniques for low-power digital circuits
Author :
Kao, James T. ; Chandrakasan, Anantha P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
Scaling and power reduction trends in future technologies will cause subthreshold leakage currents to become an increasingly large component of total power dissipation. This paper presents several dual-threshold voltage techniques for reducing standby power dissipation while still maintaining high performance in static and dynamic combinational logic blocks. MTCMOS sleep transistor sizing issues are addressed, and a hierarchical sizing methodology based on mutual exclusive discharge patterns is presented. A dual-V/sub t/ domino logic style that provides the performance equivalent of a purely low-V/sub t/ design with the standby leakage characteristic of a purely high-V/sub t/ implementation is also proposed.
Keywords :
CMOS digital integrated circuits; CMOS logic circuits; combinational circuits; integrated circuit design; leakage currents; logic design; low-power electronics; MTCMOS sleep transistor sizing issues; dual-V/sub t/ domino logic style; dual-threshold voltage techniques; dynamic combinational logic blocks; hierarchical sizing methodology; low threshold voltage design; low-power digital circuits; multithreshold CMOS; mutual exclusive discharge patterns; power reduction; standby leakage characteristic; standby power dissipation; static combinational logic blocks; subthreshold leakage currents; total power dissipation; CMOS logic circuits; CMOS technology; Capacitance; Digital circuits; Integrated circuit technology; Leakage current; Power dissipation; Subthreshold current; Switching circuits; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of