• DocumentCode
    1350169
  • Title

    Dual-threshold voltage techniques for low-power digital circuits

  • Author

    Kao, James T. ; Chandrakasan, Anantha P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
  • Volume
    35
  • Issue
    7
  • fYear
    2000
  • fDate
    7/1/2000 12:00:00 AM
  • Firstpage
    1009
  • Lastpage
    1018
  • Abstract
    Scaling and power reduction trends in future technologies will cause subthreshold leakage currents to become an increasingly large component of total power dissipation. This paper presents several dual-threshold voltage techniques for reducing standby power dissipation while still maintaining high performance in static and dynamic combinational logic blocks. MTCMOS sleep transistor sizing issues are addressed, and a hierarchical sizing methodology based on mutual exclusive discharge patterns is presented. A dual-V/sub t/ domino logic style that provides the performance equivalent of a purely low-V/sub t/ design with the standby leakage characteristic of a purely high-V/sub t/ implementation is also proposed.
  • Keywords
    CMOS digital integrated circuits; CMOS logic circuits; combinational circuits; integrated circuit design; leakage currents; logic design; low-power electronics; MTCMOS sleep transistor sizing issues; dual-V/sub t/ domino logic style; dual-threshold voltage techniques; dynamic combinational logic blocks; hierarchical sizing methodology; low threshold voltage design; low-power digital circuits; multithreshold CMOS; mutual exclusive discharge patterns; power reduction; standby leakage characteristic; standby power dissipation; static combinational logic blocks; subthreshold leakage currents; total power dissipation; CMOS logic circuits; CMOS technology; Capacitance; Digital circuits; Integrated circuit technology; Leakage current; Power dissipation; Subthreshold current; Switching circuits; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.848210
  • Filename
    848210