DocumentCode
1350169
Title
Dual-threshold voltage techniques for low-power digital circuits
Author
Kao, James T. ; Chandrakasan, Anantha P.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Volume
35
Issue
7
fYear
2000
fDate
7/1/2000 12:00:00 AM
Firstpage
1009
Lastpage
1018
Abstract
Scaling and power reduction trends in future technologies will cause subthreshold leakage currents to become an increasingly large component of total power dissipation. This paper presents several dual-threshold voltage techniques for reducing standby power dissipation while still maintaining high performance in static and dynamic combinational logic blocks. MTCMOS sleep transistor sizing issues are addressed, and a hierarchical sizing methodology based on mutual exclusive discharge patterns is presented. A dual-V/sub t/ domino logic style that provides the performance equivalent of a purely low-V/sub t/ design with the standby leakage characteristic of a purely high-V/sub t/ implementation is also proposed.
Keywords
CMOS digital integrated circuits; CMOS logic circuits; combinational circuits; integrated circuit design; leakage currents; logic design; low-power electronics; MTCMOS sleep transistor sizing issues; dual-V/sub t/ domino logic style; dual-threshold voltage techniques; dynamic combinational logic blocks; hierarchical sizing methodology; low threshold voltage design; low-power digital circuits; multithreshold CMOS; mutual exclusive discharge patterns; power reduction; standby leakage characteristic; standby power dissipation; static combinational logic blocks; subthreshold leakage currents; total power dissipation; CMOS logic circuits; CMOS technology; Capacitance; Digital circuits; Integrated circuit technology; Leakage current; Power dissipation; Subthreshold current; Switching circuits; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.848210
Filename
848210
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