Title :
Analysis of an FET amplifier using power-dependent S-parameters
Author :
Umeda, H. ; Nakajima, M.
Author_Institution :
Dept. of Electr. Eng., Fukui Univ., Japan
fDate :
8/1/1988 12:00:00 AM
Abstract :
The paper describes a method to derive large-signal S-parameters as functions of the output power with application to calculating the large-signal power gain of an FET amplifier. The S-parameter S22 of a microwave power FET is used to describe the nonlinearity of its large-signal output impedance based on which the output at a given load is determined from the measured data. The large-signal S-parameters of the FET can be expressed as a quadratic function of the output power, and are used to compute the gain compression effect of the FET amplifier. This is found to be in good agreement with experimental results
Keywords :
S-parameters; field effect transistor circuits; microwave amplifiers; nonlinear network analysis; power amplifiers; solid-state microwave circuits; FET amplifier; gain compression effect; large-signal S-parameters; large-signal power gain; microwave power FET; output impedance; power-dependent S-parameters;
Journal_Title :
Electronic Circuits and Systems, IEE Proceedings G
