Title :
Low-dropout voltage reference: an approach to low-temperature-sensitivity architectures with high drive capability
Author :
Aminzadeh, Hamed ; Lotfi, Reza ; Mafinezhad, K.
Author_Institution :
Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran
Abstract :
A modified circuit topology for voltage references capable of providing very high load current with low-temperature-sensitivity output voltage is presented. Employing a proportional-to-absolute-temperature current source and a complementary-to-absolute-temperature voltage source in a novel closed-loop configuration, the output voltage can be tuned over a wide range of voltages lower or higher than the silicon bandgap voltage. These features make the configuration a promising competitor for low-dropout regulators. A possible implementation of the proposed topology in 0.18 mum technology shows that the simulated 0.9 and 1.3 V voltage references have fast and stable operation for load currents up to 100 mA. The temperature coefficient for both design cases is smaller than 37 ppm/degC.
Keywords :
low-power electronics; voltage regulators; closed loop configuration; low dropout regulator; low dropout voltage reference; low temperature sensitivity architecture; modified circuit topology; silicon bandgap voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1531