DocumentCode :
1350377
Title :
Challenges and Directions for Low-Voltage SRAM
Author :
Qazi, Masood ; Sinangil, Mahmut E. ; Chandrakasan, Anantha P.
Volume :
28
Issue :
1
fYear :
2011
Firstpage :
32
Lastpage :
43
Abstract :
SRAMs capable of operating at extremely low supply voltages-for example, below the transistor threshold voltage-can enable ultra-low-power battery-operated systems by allowing the logic and memory to operate at the same optimal supply voltage. This review article presents SRAM techniques including new bit cells, novel sensing schemes, and read/write assist circuits for ultra-low-power applications.
Keywords :
CMOS memory circuits; SRAM chips; low-power electronics; bit cell; low supply voltage; low-voltage SRAM; read-write assist circuit; transistor threshold voltage; ultra-low-power battery-operated system; CMOS memory circuits; SRAM; cache memories; design and test; embedded memory; low-power electronics; low-voltage electronics; random-access storage;
fLanguage :
English
Journal_Title :
Design & Test of Computers, IEEE
Publisher :
ieee
ISSN :
0740-7475
Type :
jour
DOI :
10.1109/MDT.2010.115
Filename :
5601670
Link To Document :
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