Title :
Highly-efficient CMOS C-band class-F power amplifier for low supply voltages
Author :
Carls, J. ; Ellinger, F. ; Joerges, U. ; Krcmar, M.
Author_Institution :
Dept. of Electr. Eng. & Inf. Technol, Dresden Univ. of Technol., Dresden, Germany
Abstract :
A fully integrated 5-6-GHz class-F power amplifier in 180-nm CMOS, optimised for low supply voltages (V dd), is presented. At a V dd of 1.5 V, a power added efficiency (PAE) up to 42.7 and a 1 dB compression point (P1 dB) of 16.2 dBm are measured. At 1.9 V V dd, a P1 dB of 18.4 dBm, a PAE of 42.8 , and a gain of 8.8 dB are achieved.
Keywords :
CMOS analogue integrated circuits; microwave integrated circuits; microwave power amplifiers; CMOS C-band class-F power amplifier; frequency 5 GHz to 6 GHz; low-supply voltages; power added efficiency; size 180 nm; voltage 1.5 V; voltage 1.9 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.1252
