• DocumentCode
    1350535
  • Title

    Highly-efficient CMOS C-band class-F power amplifier for low supply voltages

  • Author

    Carls, J. ; Ellinger, F. ; Joerges, U. ; Krcmar, M.

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Technol, Dresden Univ. of Technol., Dresden, Germany
  • Volume
    45
  • Issue
    24
  • fYear
    2009
  • Firstpage
    1240
  • Lastpage
    1241
  • Abstract
    A fully integrated 5-6-GHz class-F power amplifier in 180-nm CMOS, optimised for low supply voltages (V dd), is presented. At a V dd of 1.5 V, a power added efficiency (PAE) up to 42.7 and a 1 dB compression point (P1 dB) of 16.2 dBm are measured. At 1.9 V V dd, a P1 dB of 18.4 dBm, a PAE of 42.8 , and a gain of 8.8 dB are achieved.
  • Keywords
    CMOS analogue integrated circuits; microwave integrated circuits; microwave power amplifiers; CMOS C-band class-F power amplifier; frequency 5 GHz to 6 GHz; low-supply voltages; power added efficiency; size 180 nm; voltage 1.5 V; voltage 1.9 V;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2009.1252
  • Filename
    5349293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1350535