Theory and small signal analysis for a new bipolar injection transit time device (BIPOLITT)

Author

Chen, Lin ; Pan, Dee-Son

Author_Institution

ATI Res. Silicon Valley Inc., Santa Clara, CA, USA

Volume

47

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1310

Lastpage

1314

Abstract

We have proposed and analyzed a new millimeter and submillimeter wave transit time device, the bipolar injection and transit time diode (BIPOLITT). The theory and small signal analysis for a two-terminal type rf operation is presented here. The device structure is similar to a heterojunction bipolar transistor (HBT) with an rf floating base. The relatively longer base is utilized to achieve an injection-phase delay close to 180°. The collector depletion region is used as drift region. As an example, a BIPOLITT diode for 300-400 GHz operation is designed, and its small signal specific negative resistance is calculated to be about -3×10^-7 Ω·cm²

Keywords

millimetre wave diodes; negative resistance devices; submillimetre wave diodes; transit time devices; 300 to 400 GHz; BIPOLITT diode; bipolar injection transit time device; floating base; millimeter wave device; negative resistance; small-signal analysis; submillimeter wave device; two-terminal RF device; Bipolar transistors; Delay; Diodes; Frequency; Heterojunction bipolar transistors; Millimeter wave devices; Millimeter wave technology; Millimeter wave transistors; Signal analysis; Submillimeter wave devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.848269

Filename

848269