• DocumentCode
    1350575
  • Title

    The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents

  • Author

    Su, Y.K. ; Chen, W.R. ; Chang, S.J. ; Juang, F.S. ; Lan, W.H. ; Lin, A.C.H. ; Chang, H.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    47
  • Issue
    7
  • fYear
    2000
  • fDate
    7/1/2000 12:00:00 AM
  • Firstpage
    1330
  • Lastpage
    1333
  • Abstract
    The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LED´s) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back to back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side
  • Keywords
    II-VI semiconductors; electroluminescence; light emitting diodes; metal-semiconductor-metal structures; red shift; wide band gap semiconductors; zinc compounds; 5 to 40 mA; 510 to 530 nm; CuGe/Pt/Au contact metal; ZnSSe; ZnSSe metal-semiconductor-metal light emitting diode; acceptor level; blue-green emission; current injection; current-voltage characteristics; electroluminescent spectra; radiative recombination center; red shift; Contact resistance; Diode lasers; Electroluminescence; Gold; Light emitting diodes; Ohmic contacts; Optical materials; Photonic band gap; Radiative recombination; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.848273
  • Filename
    848273