Title :
The red shift of ZnSSe metal-semiconductor-metal light emitting diodes with high injection currents
Author :
Su, Y.K. ; Chen, W.R. ; Chang, S.J. ; Juang, F.S. ; Lan, W.H. ; Lin, A.C.H. ; Chang, H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
7/1/2000 12:00:00 AM
Abstract :
The reliable n+-ZnSSe metal-semiconductor-metal (MSM) blue-green light emitting diodes (LED´s) have been fabricated. The contact metal was CuGe/Pt/Au. The current transport mechanisms agree very well with the back to back tunneling diodes. The kink phenomena were observed in the MSM current-voltage curves. In the metal-semiconductor interface, the element Zn in ZnSSe can be replaced by Cu results in some acceptor levels as radiative recombination centers in the MS interface. The peak wavelength in the LED electroluminescent (EL) spectra was strongly dependent on the injection currents from 5 to 40 mA. The peak wavelength and full width at half maximum are 510 and 10 nm, respectively, at 10 mA injection current. When the injection current increases to 15 mA, the peak wavelength shifted to 530 nm due to different recombination centers. Further increasing the injection currents, the peak wavelength shifted slightly to the long wavelength side
Keywords :
II-VI semiconductors; electroluminescence; light emitting diodes; metal-semiconductor-metal structures; red shift; wide band gap semiconductors; zinc compounds; 5 to 40 mA; 510 to 530 nm; CuGe/Pt/Au contact metal; ZnSSe; ZnSSe metal-semiconductor-metal light emitting diode; acceptor level; blue-green emission; current injection; current-voltage characteristics; electroluminescent spectra; radiative recombination center; red shift; Contact resistance; Diode lasers; Electroluminescence; Gold; Light emitting diodes; Ohmic contacts; Optical materials; Photonic band gap; Radiative recombination; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on