Title :
Favourable photovoltaic effects in InGaN pin homojunction solar cell
Author :
Cai, X.-M. ; Zeng, S.-W. ; Zhang, Bao-Ping
Author_Institution :
Dept. of Phys., Xiamen Univ., Xiamen, China
Abstract :
InGaN pin homojunction solar cells with different In content (x = 0.02/ 0.12/0.15) have been fabricated. The measured open-circuit voltages (Voc) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; p-n junctions; photovoltaic effects; solar cells; wide band gap semiconductors; InGaN; fill factors; open-circuit voltage; photovoltaic effects; pin homojunction solar cells; voltage 0.96 V; voltage 1.34 V; voltage 2.24 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2009.2094
