Title :
1/f noise model of fully overlapped lightly doped drain MOSFET
Author :
Kumar, Anil ; Kalra, Ekta ; Haldar, Subhasis ; Gupta, R.S.
Author_Institution :
Dept. of Electron. Sci., Delhi Univ., India
fDate :
7/1/2000 12:00:00 AM
Abstract :
This paper presents an analytical 1/f noise model of fully overlapped lightly doped drain MOSFET incorporating the voltage drop in the n- region due to the parasitic resistance. The FOLD structure has lesser noise effect than LDD MOSFET and the predicted results are verified with experimental data
Keywords :
1/f noise; MOSFET; semiconductor device models; semiconductor device noise; semiconductor device reliability; 1/f noise model; FOLD structure; fully overlapped LDD MOSFET; lightly doped drain MOSFET; n- region; parasitic resistance; voltage drop; Electron mobility; Electron traps; Light scattering; MOSFET circuits; Noise level; Research and development; Semiconductor device noise; Semiconductor devices; Surface fitting; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
