• DocumentCode
    1350683
  • Title

    1/f noise model of fully overlapped lightly doped drain MOSFET

  • Author

    Kumar, Anil ; Kalra, Ekta ; Haldar, Subhasis ; Gupta, R.S.

  • Author_Institution
    Dept. of Electron. Sci., Delhi Univ., India
  • Volume
    47
  • Issue
    7
  • fYear
    2000
  • fDate
    7/1/2000 12:00:00 AM
  • Firstpage
    1426
  • Lastpage
    1430
  • Abstract
    This paper presents an analytical 1/f noise model of fully overlapped lightly doped drain MOSFET incorporating the voltage drop in the n- region due to the parasitic resistance. The FOLD structure has lesser noise effect than LDD MOSFET and the predicted results are verified with experimental data
  • Keywords
    1/f noise; MOSFET; semiconductor device models; semiconductor device noise; semiconductor device reliability; 1/f noise model; FOLD structure; fully overlapped LDD MOSFET; lightly doped drain MOSFET; n- region; parasitic resistance; voltage drop; Electron mobility; Electron traps; Light scattering; MOSFET circuits; Noise level; Research and development; Semiconductor device noise; Semiconductor devices; Surface fitting; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.848287
  • Filename
    848287
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1350683