GaAsSb-based backward diodes for highly sensitive millimetre-wave detectors

Author

Takahashi, Tatsuro ; Sato, Mitsuhisa ; Hirose, Tatsuya ; Hara, Naoya

Author_Institution

Fujitsu Ltd., Kawasaki, Japan

Volume

45

Issue

24

fYear

2009

Firstpage

1269

Lastpage

1270

Abstract

Highly sensitive millimetre-wave detectors based on p-GaAs_0.51Sb_0.49/i-In_0.52Al_0.48As/n-In_xGa_1-xAs backward diodes under zero-bias operation were developed on an InP substrate. Voltage sensitivity of 12300 V/W at 94 GHz was achieved with the GaAsSb-based diode which has a circular mesa with a diameter of 0.9 m. To improve the sensitivity, the indium composition of the n-In_xGa_1-xAs layer and thickness of the i-In_0.52Al_0.48As layer were optimised. Furthermore, a self-aligned process was performed to minimise parasitic resistance at an ohmic contact layer. These GaAsSb-based diodes that are lattice-matched to InP are promising for easy integration with high-performance InP low-noise amplifiers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; low noise amplifiers; millimetre wave detectors; millimetre wave diodes; ohmic contacts; p-i-n diodes; wide band gap semiconductors; GaAs_0.51-Sb_0.49-In_0.52Al_0.48As-In_xGa_1-xAs; InP; backward diode; frequency 94 GHz; highly-sensitive millimetre-wave detector; low-noise amplifier; ohmic contact layer; parasitic resistance; self-aligned process; size 9 m; zero-bias operation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2009.2496

Filename

5349313