Hot electron and hot hole degradation of UHV/CVD SiGe HBT´s

Author

Gogineni, Usha ; Cressler, John D. ; Niu, Guofu ; Harame, David L.

Author_Institution

Alabama Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA

Volume

47

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

1440

Lastpage

1448

Abstract

We investigate the degradation in current gain and low-frequency noise of SiGe HBT´s under reverse emitter-base stress due to hot electrons (forward-collector stress) and hot holes (open-collector stress). Contrary to previous assumptions we show that hot electrons and hot holes with the same kinetic energy generate different amounts of traps and hence have a different impact on device degradation. These results suggest that the accuracy of using forward-collector stress as an acceleration tool and reliability predictor must be carefully examined. We also present, for the first time, the effect of Ge profile shape on the reliability of SiGe HBT´s, as well as discuss measurements on SiGe HBT´s as a function of device geometry and temperature

Keywords

Ge-Si alloys; heterojunction bipolar transistors; hot carriers; semiconductor device models; semiconductor device noise; semiconductor device reliability; semiconductor materials; 2D MEDICI simulation; Ge profile shape; LF noise degradation; SiGe; SiGe HBTs; UHV/CVD HBT; current gain degradation; device geometry; device temperature; forward-collector stress; hot electron degradation; hot hole degradation; low-frequency noise; open-collector stress; reliability predictor; reverse emitter-base stress; traps; Charge carrier processes; Degradation; Electron emission; Germanium silicon alloys; Hot carriers; Kinetic energy; Low-frequency noise; Shape measurement; Silicon germanium; Stress;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.848289

Filename

848289