Title :
Light dependence of SOI MOSFET with nonuniform doping profile
Author :
Abraham, George K. ; Pal, B.B. ; Khan, R.U.
Author_Institution :
Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India
fDate :
7/1/2000 12:00:00 AM
Abstract :
The light dependence of a fully depleted short channel silicon-on-insulator (SOI) MOSFET is investigated. As the photon flux density increases, there is a lowering in the surface potential barrier called the photon induced barrier lowering (PIBL). The threshold voltage shows a logarithmic reduction with the increase in the incident flux density. The drain source current and the transconductance significantly increase under the incident optical flux density. The device will be useful for high speed application in optical systems
Keywords :
MOSFET; doping profiles; photodetectors; silicon-on-insulator; surface potential; SOI MOSFET; Si; drain source current; fully depleted short channel MOSFET; high speed application; light dependence; nonuniform doping profile; optical systems; photon flux density; photon induced barrier lowering; surface potential barrier lowering; threshold voltage; transconductance; Doping profiles; High speed optical techniques; Lighting; MOSFET circuits; Optical devices; Optical films; Optical sensors; Photodetectors; Silicon on insulator technology; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
