Title :
Low temperature analysis of 0.25 μm T-gate strained Si/Si0.55Ge0.45 n-MODFET´s
Author :
Aniel, F. ; Zerounian, N. ; Adde, R. ; Zeuner, M. ; Hackbarth, T. ; König, U.
Author_Institution :
Inst. d´´Electron. Fondamentale, Univ. de Paris-Sud, Orsay, France
fDate :
7/1/2000 12:00:00 AM
Abstract :
A low temperature dc and HF investigation of 0.25 μm T-gate Si/Si0.55Ge0.45 n-MODFET´s is presented. Outstanding maximum oscillation frequencies fmax range from 100-120 GHz at 300 K up to 195 GHz at 50 K. These high-frequency characteristics are the first reported at low temperature on Si/SiGe n-MODFET´s and are also the highest room temperature data reported so far; physical modeling is used to explain the main trends observed when cooling down the n-MODFET. Many experimental data are presented. The dependence on temperature and biases of the important small-signal equivalent circuit parameters is investigated to analyze the device high-frequency performances and the minimum noise figure of the intrinsic device is determined
Keywords :
Ge-Si alloys; cryogenic electronics; elemental semiconductors; equivalent circuits; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor materials; silicon; 0.25 micron; 100 to 195 GHz; 300 to 50 K; HF investigation; Si-Si0.55Ge0.45; T-gate strained MODFETs; high-frequency characteristics; low temperature analysis; maximum oscillation frequencies; minimum noise figure; physical modeling; small-signal equivalent circuit parameters; Cooling; Equivalent circuits; Frequency; Germanium silicon alloys; Hafnium; Noise figure; Performance analysis; Silicon germanium; Temperature dependence; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
