• DocumentCode
    1350875
  • Title

    Photoelectrical and Noise Characteristics of ZnO Nanowire Networks Photosensor

  • Author

    Peng, Shi-Ming ; Su, Yan-Kuin ; Ji, Liang-Wen ; Young, Sheng-Joue ; Wu, Cheng-Zhi ; Tsai, Chi-Nan ; Chao, Wan-Chun ; Cheng, Wei-Bin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    11
  • Issue
    5
  • fYear
    2011
  • fDate
    5/1/2011 12:00:00 AM
  • Firstpage
    1173
  • Lastpage
    1177
  • Abstract
    This study describes the photoresponse and noise characteristics of UV photosensors with ZnO nanowire networks. The fabrication approach, which combines conventional photolithography with sidewall nucleation sites, achieves site specificity and the self-assembly of an ordered ZnO nanowire networks. The photoresponse of the device is approximately three orders of magnitude, because the high surface-to-volume ratio enables efficient light absorption. These results reveal that the reproducible photocurrent response, high-photosensivity, internal gain and detectivity suggest that the device has potential applications in UV photodetection.
  • Keywords
    II-VI semiconductors; light absorption; nanosensors; nanowires; photodetectors; photolithography; ultraviolet detectors; wide band gap semiconductors; zinc compounds; UV photosensor; ZnO; light absorption; nanowire network photosensor; noise characteristic; photocurrent response; photoelectrical characteristic; photolithography; sidewall nucleation site; Internal gain; ZnO nanowire; photosensivity; photosensor;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2010.2087377
  • Filename
    5601745