DocumentCode
1350875
Title
Photoelectrical and Noise Characteristics of ZnO Nanowire Networks Photosensor
Author
Peng, Shi-Ming ; Su, Yan-Kuin ; Ji, Liang-Wen ; Young, Sheng-Joue ; Wu, Cheng-Zhi ; Tsai, Chi-Nan ; Chao, Wan-Chun ; Cheng, Wei-Bin
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume
11
Issue
5
fYear
2011
fDate
5/1/2011 12:00:00 AM
Firstpage
1173
Lastpage
1177
Abstract
This study describes the photoresponse and noise characteristics of UV photosensors with ZnO nanowire networks. The fabrication approach, which combines conventional photolithography with sidewall nucleation sites, achieves site specificity and the self-assembly of an ordered ZnO nanowire networks. The photoresponse of the device is approximately three orders of magnitude, because the high surface-to-volume ratio enables efficient light absorption. These results reveal that the reproducible photocurrent response, high-photosensivity, internal gain and detectivity suggest that the device has potential applications in UV photodetection.
Keywords
II-VI semiconductors; light absorption; nanosensors; nanowires; photodetectors; photolithography; ultraviolet detectors; wide band gap semiconductors; zinc compounds; UV photosensor; ZnO; light absorption; nanowire network photosensor; noise characteristic; photocurrent response; photoelectrical characteristic; photolithography; sidewall nucleation site; Internal gain; ZnO nanowire; photosensivity; photosensor;
fLanguage
English
Journal_Title
Sensors Journal, IEEE
Publisher
ieee
ISSN
1530-437X
Type
jour
DOI
10.1109/JSEN.2010.2087377
Filename
5601745
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