DocumentCode :
1350875
Title :
Photoelectrical and Noise Characteristics of ZnO Nanowire Networks Photosensor
Author :
Peng, Shi-Ming ; Su, Yan-Kuin ; Ji, Liang-Wen ; Young, Sheng-Joue ; Wu, Cheng-Zhi ; Tsai, Chi-Nan ; Chao, Wan-Chun ; Cheng, Wei-Bin
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
11
Issue :
5
fYear :
2011
fDate :
5/1/2011 12:00:00 AM
Firstpage :
1173
Lastpage :
1177
Abstract :
This study describes the photoresponse and noise characteristics of UV photosensors with ZnO nanowire networks. The fabrication approach, which combines conventional photolithography with sidewall nucleation sites, achieves site specificity and the self-assembly of an ordered ZnO nanowire networks. The photoresponse of the device is approximately three orders of magnitude, because the high surface-to-volume ratio enables efficient light absorption. These results reveal that the reproducible photocurrent response, high-photosensivity, internal gain and detectivity suggest that the device has potential applications in UV photodetection.
Keywords :
II-VI semiconductors; light absorption; nanosensors; nanowires; photodetectors; photolithography; ultraviolet detectors; wide band gap semiconductors; zinc compounds; UV photosensor; ZnO; light absorption; nanowire network photosensor; noise characteristic; photocurrent response; photoelectrical characteristic; photolithography; sidewall nucleation site; Internal gain; ZnO nanowire; photosensivity; photosensor;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2010.2087377
Filename :
5601745
Link To Document :
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