Title :
A High-Precision Compensated CMOS Bandgap Voltage Reference Without Resistors
Author :
Ming, Xin ; Ma, Ying-Qian ; Zhou, Ze-kun ; Zhang, Bo
Author_Institution :
State key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A high-precision compensated CMOS bandgap reference without resistors, which is fabricated in 0.5- μm CMOS technology, is presented in this brief. The circuit uses ratioed transistors together with the inverse-function technique to produce a first-order temperature-insensitive voltage reference. More importantly, a higher-order curvature correction method called VBE linearization is presented to directly compensate for the thermal nonlinearity of the base-emitter voltage. The power consumption of the proposed reference is 0.648 mW at 3.6 V. A temperature coefficient of 11.8 ppm/°C and power supply rejection ratio (PSRR) of more than 31 dB at low frequencies are easily achieved.
Keywords :
CMOS integrated circuits; power consumption; reference circuits; transistor circuits; CMOS technology; VBE linearization; base-emitter voltage; first-order temperature-insensitive voltage reference; high-precision compensated CMOS bandgap; higher-order curvature correction method; inverse-function technique; power 0.648 mW; power consumption; power supply rejection ratio; ratioed transistor; size 0.5 mum; thermal nonlinearity; voltage 3.6 V; CMOS integrated circuits; Photonic band gap; Resistors; Temperature distribution; Transistors; Bandgap reference; inverse-function technique; resistors; thermal nonlinearity; translinear circuit;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2010.2067770
