DocumentCode :
1350961
Title :
A Theoretical Calculation of the Impact of GaN Cap and 
Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a
Author :
Liu, Guipeng ; Wu, Ju ; Lu, Yanwu ; Zhang, Biao ; Li, Chengming ; Sang, Ling ; Song, Yafeng ; Shi, Kai ; Liu, Xianglin ; Yang, Shaoyan ; Zhu, QinSheng ; Wang, Zhanguo
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Volume :
58
Issue :
12
fYear :
2011
Firstpage :
4272
Lastpage :
4275
Abstract :
The electron mobility in a 2-D electron gas in a GaN/AlxGa1-xN/GaN heterostructure limited by GaN cap-thickness-fluctuation (CTF) and AlxGa1-xN barrier thickness-fluctuation (BTF) scattering is calculated considering the strong spontaneous and piezoelectric polarization. The calculated results reveal that the electron mobility limited by CTF and BTF scattering is lower than that limited by interface roughness scattering if the AlxGa1-xN barrier layer is thin enough (several nanometers).
Keywords :
III-V semiconductors; aluminium compounds; current fluctuations; dielectric polarisation; electron mobility; gallium compounds; interface roughness; piezoelectricity; semiconductor heterojunctions; surface scattering; two-dimensional electron gas; wide band gap semiconductors; 2DEG; GaN-AlxGa1-xN-GaN; barrier-thickness-fluctuation scattering; cap-thickness-fluctuation scattering; electron mobility; heterostructure; interface roughness scattering; piezoelectric polarization; spontaneous polarization; two-dimensional electron gas; Aluminum gallium nitride; Electron mobility; Gallium nitride; HEMTs; MODFETs; Scattering; Silicon; Cap-thickness-fluctuation (CTF) and barrier-thickness fluctuation (BTF) scattering; interface roughness scattering; two dimensional electron gas (2DEG);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2167334
Filename :
6046120
Link To Document :
