Calculation of exciton absorption in arbitrary layered semiconductor nanostructures with exact treatment of the Coulomb singularity

Author

Ahland, Andreas ; Wiedenhaus, Marco ; Schulz, Dirk ; Voges, Edgar

Author_Institution

Lehrstuhl fur Hochfrequenztech., Dortmund Univ., Germany

Volume

36

Issue

7

fYear

2000

fDate

7/1/2000 12:00:00 AM

Firstpage

842

Lastpage

848

Abstract

An accurate finite-element exciton calculation is presented. The Coulomb singularity is exactly taken into account without any further assumptions because analytical expressions are calculated for the Coulomb matrix elements even for the general three-dimensional case. Due to open boundary conditions, this is an accurate and fast model for calculating the optical properties of arbitrary semiconductor structures. The advantage will be demonstrated by an investigation of bulk, quantum-well, and multiquantum-well absorption.

Keywords

electroabsorption; excitons; finite element analysis; semiconductor quantum wells; Coulomb singularity; bulk absorption; density matrix; exciton absorption; finite element model; layered semiconductor nanostructure; multiquantum well absorption; optical properties; quantum well absorption; Absorption; Boundary conditions; Charge carrier processes; Equations; Excitons; Finite element methods; Optical scattering; Optical superlattices; Particle scattering; Semiconductor nanostructures;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.848357

Filename

848357