Title :
Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation
Author :
Rudan, Massimo ; Giovanardi, Fabio ; Piccinini, Enrico ; Buscemi, Fabrizio ; Brunetti, Rossella ; Jacoboni, Carlo
Author_Institution :
Univ. of Bologna, Bologna, Italy
Abstract :
Charge transport in amorphous chalcogenide-GST used for memory devices is modeled using two contributions: hopping of trapped electrons and motion of band electrons in extended states. The type of feedback that produces the snapback phenomenon is described as a filamentation in energy that is controlled by electron-electron interactions between trapped electrons and band electrons. The model thus derived is implemented within a state-of-the-art simulator. An analytical version of the model is also derived and is useful for discussing the snapback behavior and the scaling properties of the device.
Keywords :
electron-electron interactions; random-access storage; amorphous chalcogenide-GST; amorphous-GST memory devices; band electrons; charge transport; electron-electron interaction; energy filamentation; snapback behavior; transport model; trapped electrons; voltage snapback; Current density; Electron traps; Impact ionization; Mathematical model; Radiative recombination; Resistance; Amorphous chalcogenide; nonvolatile memory; phase-change memory (PCM); transport modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2168402