DocumentCode
1351290
Title
Memory Built-in Self-Repair Planning Framework for RAMs in SoCs
Author
Hou, Chih-Sheng ; Li, Jin-Fu ; Tseng, Tsu-Wei
Author_Institution
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
Volume
30
Issue
11
fYear
2011
Firstpage
1731
Lastpage
1743
Abstract
Built-in self-repair (BISR) techniques are widely used to enhance the yield of random access memories (RAMs) in a system-on-chip (SoC) which typically consists of hundreds of RAMs. Hence, many BISR circuits may be needed in a such SoC. Effective techniques for planning these BISR circuits thus are imperative. In this paper, we propose a memory BISR planning (MBiP) framework for the RAMs in SoCs. The MBiP framework consists of a memory grouping algorithm for selecting RAMs which can share a BISR circuit. Then, a test scheduling algorithm is used to determine the test sequence of RAMs in a SoC under the constraint of test power. Finally, a BISR scheme allocation algorithm is proposed to allocate different BISR schemes for the RAMs under the constraints of the results of memory grouping and test scheduling. Simulation results show that the proposed MBiP can effectively plan the BISR schemes for the RAMs in a SoC. For example, about 22% area reduction can be achieved by the BISR schemes planned by the proposed MBiP framework for 50 RAMs under 1.5 mm distance constraint and 350 mW test power constraint in comparison with a dedicated BISR scheme (i.e., each RAM has a self-contained BISR circuit).
Keywords
built-in self test; random-access storage; system-on-chip; RAM; SoC; memory BISR planning; memory built in self repair planning framework; memory grouping algorithm; power 350 mW; test power constraint; test scheduling algorithm; test sequence; Built-in self-test; Maintenance engineering; Random access memory; Resource management; System-on-a-chip; BISR allocation; RAMs; built-in self-repair; built-in self-test; system-on-chip (SoC); test scheduling;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/TCAD.2011.2160174
Filename
6046177
Link To Document