Title :
Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE
Author :
Mahata, Mihir Kr ; Ghosh, Saptarsi ; Jana, Sanjay ; Mukhopadhyay, Partha ; Bag, Ankush ; Mukulika, Syed ; Dinara, Rahul Kumar ; Das, Subhashis ; Chakraborty, Apurba ; Biswas, Dhrubes
Author_Institution :
Adv. Technol. Dev. Center, Indian Inst. of Technol., Kharagpur, Kharagpur, India
fDate :
Feb. 28 2014-March 2 2014
Abstract :
High quality pseudomorphic Al0.15Ga0.85As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections. The layer thickness, and interface roughness were estimated from X-ray reflectivity (XRR) by fit with computer simulation. The carrier concentration, mobility and sheet resistance were measured from temperature dependent Hall experiment. The transport properties of the as-grown structure are found to be at par with the best literature reports.
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; X-ray reflection; aluminium compounds; carrier density; carrier mobility; electric resistance; gallium arsenide; interface roughness; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor heterojunctions; Al0.15Ga0.85As-GaAs; AlGaAs-GaAs (004) reflections; GaAs; HRXRD; X-ray reflectivity; aluminum mole fraction; carrier concentration; carrier mobility; computer simulation; high quality pseudomorphic heterostructure; high resolution X-ray diffraction; interface roughness; layer thickness; molecular beam epitaxy; nominal structure; peak separation; photoluminescence; semi-insulating GaAs(100) substrate; sheet resistance; temperature dependent Hall experiment; transport properties; Gallium arsenide; HEMTs; MODFETs; Molecular beam epitaxial growth; Scattering; Substrates; Temperature measurement; HRXRD; MBE; PL;
Conference_Titel :
Students' Technology Symposium (TechSym), 2014 IEEE
Conference_Location :
Kharagpur
Print_ISBN :
978-1-4799-2607-7
DOI :
10.1109/TechSym.2014.6808082
