Sub-1-V CMOS Image Sensor Using Time-Based Readout Circuit

Author

Cho, Kunhee ; Lee, Dongmyung ; Lee, Jeonghwan ; Han, Gunhee

Author_Institution

Dept. of Electr. & Electron. Eng. ing, Yonsei Univ., Seoul, South Korea

Volume

57

Issue

1

fYear

2010

Firstpage

222

Lastpage

227

Abstract

This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- Â¿m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.

Keywords

CMOS image sensors; readout electronics; low power-supply voltage; standard CMOS logic process; sub-1-V CMOS image sensor; thin-oxide gate transistors; time-based readout circuit; CMOS image sensors; CMOS logic circuits; CMOS process; Computational Intelligence Society; Computational fluid dynamics; Dynamic range; Dynamic voltage scaling; Low voltage; Pulse width modulation; Threshold voltage; CMOS active pixel sensor; CMOS image sensor (CIS); low power; low voltage; time-based readout (TBR);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2009.2035194

Filename

5350740