Title :
Sub-1-V CMOS Image Sensor Using Time-Based Readout Circuit
Author :
Cho, Kunhee ; Lee, Dongmyung ; Lee, Jeonghwan ; Han, Gunhee
Author_Institution :
Dept. of Electr. & Electron. Eng. ing, Yonsei Univ., Seoul, South Korea
Abstract :
This paper proposes a sub-1-V CMOS image sensor using a time-based readout (TBR) circuit. The proposed TBR circuit senses the moment of event from the pixel instead of reading the voltage signal. This allows the use of low power-supply voltage in pixel, providing sufficient dynamic range. The prototype chip was fabricated with a 0.13- ¿m standard CMOS logic process, and whole circuits were designed with thin-oxide gate transistors only. The measurement results show a 54.2-dB dynamic range with 0.75-V power-supply voltage.
Keywords :
CMOS image sensors; readout electronics; low power-supply voltage; standard CMOS logic process; sub-1-V CMOS image sensor; thin-oxide gate transistors; time-based readout circuit; CMOS image sensors; CMOS logic circuits; CMOS process; Computational Intelligence Society; Computational fluid dynamics; Dynamic range; Dynamic voltage scaling; Low voltage; Pulse width modulation; Threshold voltage; CMOS active pixel sensor; CMOS image sensor (CIS); low power; low voltage; time-based readout (TBR);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2009.2035194
