DocumentCode
1351714
Title
Investigation of Al-Doped Emitter on N-Type Rear Junction Solar Cells
Author
Sugianto, Adeline ; Mai, Ly ; Edwards, Matthew Bruce ; Tjahjono, Budi S. ; Wenham, Stuart Ross
Author_Institution
ARC Photovoltaics Centre of Excellence, Univ. of New South Wales, Sydney, NSW, Australia
Volume
57
Issue
2
fYear
2010
Firstpage
525
Lastpage
529
Abstract
This brief models the junction discontinuities of a rear Al-doped p+ emitter (np+) formed by screen printing and firing. Theoretical fitting of the suns-V oc data to the circuit model shows that not only do the junction discontinuities deteriorate cell V oc, for the case of p-type cells, but they also reduce cell fill factor on n-type cells through increased junction recombination and nonlinear shunts.
Keywords
aluminium; elemental semiconductors; equivalent circuits; semiconductor device models; silicon; solar cells; Al-Si; N-type rear junction solar cells; circuit model; emitter; equivalent circuit model; junction discontinuities; junction recombination; n-type cells; p-type cells; screen firing; screen printing; theoretical fitting; Alloying; Circuits; Furnaces; P-n junctions; Photovoltaic cells; Printing; Semiconductor device modeling; Silicon; Surface resistance; Thermal resistance; Al-doped junction; nonlinear shunts; silicon solar cells;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2009.2037174
Filename
5350745
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