Title :
High-power quantum dot superluminescent diode with integrated optical amplifier section
Author :
Wang, Z.C. ; Jin, Ping ; Lv, X.Q. ; Li, X.K. ; Wang, Z.G.
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Chinese Acad. of Sci., Beijing, China
Abstract :
A 1.1 μm high-power quantum dot superluminescent diode has been fabricated by using a two-section device structure which consists of a superluminescent section and an optical amplifier section. The device exhibits 380 mW output power with 50 nm bandwidth or 260 mW output power with 66 nm bandwidth.
Keywords :
integrated optics; semiconductor quantum dots; superluminescent diodes; high-power quantum dot superluminescent diode; integrated optical amplifier section; power 260 mW; power 380 mW; two-section device structure; wavelength 1.1 mum;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2011.2852
