• DocumentCode
    1352121
  • Title

    Low threshold room temperature GaAs/AlGaAs quantum cascade laser with InAlP waveguide

  • Author

    Atkins, C.N. ; Krysa, A.B. ; Revin, D.G. ; Kennedy, Krista ; Commin, J.P. ; Cockburn, J.W.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Sheffield, Sheffield, UK
  • Volume
    47
  • Issue
    21
  • fYear
    2011
  • Firstpage
    1193
  • Lastpage
    1194
  • Abstract
    A λ≃9.7λλm GaAs/Al0.45Ga0.55As quantum cascade laser with an In0.47Al0.53P waveguide is reported that demonstrates record low threshold current densities for the GaAs/AlxGa1-xAs materials system in the mid-infrared. Under pulsed operation, threshold current densities of 2.2 and 4.4 kA/cm2 are observed at 240 and 300 K, respectively, and laser emission is maintained up to temperatures of at least 330 K. The laser was grown by metal-organic vapour phase epitaxy, and emits peak optical powers of up to 0.57 W at 240 K and 0.16 W at 300 K.
  • Keywords
    III-V semiconductors; MOCVD; current density; gallium arsenide; indium compounds; optical waveguides; quantum cascade lasers; GaAs-AlGaAs; InAlP; metal-organic vapour phase epitaxy; optical waveguides; power 0.16 W; power 0.57 W; quantum cascade laser; temperature 240 K; temperature 293 K to 298 K; temperature 300 K; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2011.2917
  • Filename
    6047957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1352121