Title :
Demonstration of passive Q-switching in multiquantum well InGaAs/AlGaInAs diode laser
Author :
Loyo-Maldonado, V. ; McDougall, S.D. ; Marsh, J.H. ; Aitchison, J.S. ; Button, C.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
5/25/2000 12:00:00 AM
Abstract :
The first passive Q-switched operation is reported of an InGaAs-AlGaInAs diode laser with a frequency repetition ranging from 1 to 2.5 GHz at the emitting wavelength of 1.58 μm. This material is important as a thermally stable alternative to InGaAsP based laser systems operating around 1.5 μm.
Keywords :
indium compounds; 1.5 mum; 1.58 mum; InGaAs-AlGaInAs; InGaAs-AlGaInAs diode laser; InGaAs/AlGaInAs diode laser; InGaAsP; emitting wavelength; frequency repetition; laser stability; multiquantum well laser; passive Q-switching; thermally stable;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000687
