Title :
High-power AlGaInAs strained multiquantum well lasers operating at 1.52 μm
Author :
Newell, T.C. ; Varangis, P.M. ; Pease, E. ; Stintz, A. ; Liu, G.T. ; Malloy, K.J. ; Lester, L.F.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
fDate :
5/25/2000 12:00:00 AM
Abstract :
1.75 W CW power in AlGaInAs-InP strained QW lasers is demonstrated. Room temperature threshold current densities are 410 A/cm2, and the characteristic temperature is 69 K. The variation in the external differential efficiency with cavity length and temperature reveal the optimum length and show how nonradiative recombination mechanisms limit the performance.
Keywords :
aluminium compounds; 1.52 mum; 1.75 W; 69 K; AlGaInAs; AlGaInAs-InP; AlGaInAs/InP strained QW lasers; cavity length; characteristic temperature; external differential efficiency; high-power AlGaInAs strained multiquantum well lasers; nonradiative recombination mechanisms; optimum length; room temperature threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000731
