• DocumentCode
    1352284
  • Title

    High-power AlGaInAs strained multiquantum well lasers operating at 1.52 μm

  • Author

    Newell, T.C. ; Varangis, P.M. ; Pease, E. ; Stintz, A. ; Liu, G.T. ; Malloy, K.J. ; Lester, L.F.

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    36
  • Issue
    11
  • fYear
    2000
  • fDate
    5/25/2000 12:00:00 AM
  • Firstpage
    955
  • Lastpage
    956
  • Abstract
    1.75 W CW power in AlGaInAs-InP strained QW lasers is demonstrated. Room temperature threshold current densities are 410 A/cm2, and the characteristic temperature is 69 K. The variation in the external differential efficiency with cavity length and temperature reveal the optimum length and show how nonradiative recombination mechanisms limit the performance.
  • Keywords
    aluminium compounds; 1.52 mum; 1.75 W; 69 K; AlGaInAs; AlGaInAs-InP; AlGaInAs/InP strained QW lasers; cavity length; characteristic temperature; external differential efficiency; high-power AlGaInAs strained multiquantum well lasers; nonradiative recombination mechanisms; optimum length; room temperature threshold current densities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000731
  • Filename
    848988
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1352284