Title :
Photorefractive response time of B-ion-implanted KNbO3:Rb crystal
Author :
Li, Q. ; Xia, Z.H. ; Lu, X.T. ; Wang, F. ; Gong, Q.H. ; Shen, D.Z.
Author_Institution :
Nat. Lab. of Solid State Microstruct., Nanjing Univ., China
fDate :
5/25/2000 12:00:00 AM
Abstract :
An experiment investigating the photorefractive response time of Rb-doped KNbO3 crystal has been performed after proton implantation. Only one type of photorefractive grating was observed in this experiment. The experimental results show that B-ion implantation is more effective in speeding up the photorefractive response of KNbO3:Rb crystals than proton implantation. This phenomenon has been analysed in terms of the carrier density.
Keywords :
potassium compounds; B-ion implantation; B-ion-implanted; KNbO3:Rb crystal; KNbO3:Rb crystals; KNbO3:Rb,B; Rb-doped KNbO3 crystal; carrier density; photorefractive grating; photorefractive response; photorefractive response time; proton implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000689
