• DocumentCode
    1352386
  • Title

    Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects

  • Author

    Duez, V. ; Chaubet, M. ; Vanbesien, O. ; Lippens, D.

  • Author_Institution
    Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
  • Volume
    36
  • Issue
    11
  • fYear
    2000
  • fDate
    5/25/2000 12:00:00 AM
  • Firstpage
    974
  • Lastpage
    975
  • Abstract
    Optical switching of conduction characteristics in InAs-AlSb-GaSb resonant interband tunnelling diodes is theoretically investigated. Results shows a very high sensitivity to photo-created carrier concentrations due to the type II character of band alignment and of pronounced heavy hole space charge effects in the GaSb well.
  • Keywords
    indium compounds; GaSb well; InAs-AlSb-GaSb; InAs/AlSb/GaSb resonant interband tunnelling diodes; band alignment; conduction characteristics; heavy hole space charge effects; optical switching; photo-created carrier concentrations; pronounced heavy hole space charge effects; resonant interband tunnelling diodes; type II character; very high sensitivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000729
  • Filename
    849001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1352386