Title :
Optical switching of resonant interband tunnelling diodes induced by heavy hole space charge effects
Author :
Duez, V. ; Chaubet, M. ; Vanbesien, O. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
5/25/2000 12:00:00 AM
Abstract :
Optical switching of conduction characteristics in InAs-AlSb-GaSb resonant interband tunnelling diodes is theoretically investigated. Results shows a very high sensitivity to photo-created carrier concentrations due to the type II character of band alignment and of pronounced heavy hole space charge effects in the GaSb well.
Keywords :
indium compounds; GaSb well; InAs-AlSb-GaSb; InAs/AlSb/GaSb resonant interband tunnelling diodes; band alignment; conduction characteristics; heavy hole space charge effects; optical switching; photo-created carrier concentrations; pronounced heavy hole space charge effects; resonant interband tunnelling diodes; type II character; very high sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000729
