DocumentCode
1352416
Title
Aging behaviour of AlGaN/GaN HFETs with advanced ohmic and Schottky contacts
Author
Hilsenbeck, J. ; Nebauer, E. ; Wurfl, J. ; Trankle, G. ; Obloh, H.
Author_Institution
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume
36
Issue
11
fYear
2000
fDate
5/25/2000 12:00:00 AM
Firstpage
980
Lastpage
981
Abstract
The thermal degradation behaviour of AlGaN/GaN HFETs with advanced source/drain and gate metallisations is reported. Using electrical and XRD measurements, it is demonstrated that HFETs with barrier-containing Ti/Al/Ti/Au/WSiN ohmic and the Ir/Au Schottky contacts are stable during aging at 500°C up to 120 h.
Keywords
junction gate field effect transistors; 500 C; AlGaN-GaN; AlGaN/GaN HFET; Ir-Au; Schottky contact; Ti-Al-Ti-Au-WSiN; X-ray diffraction; diffusion barrier; electrical characteristics; metallisation; ohmic contact; thermal aging;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20000702
Filename
849006
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