DocumentCode :
1352443
Title :
UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO
Author :
Ohta, H. ; Kawamura, K. ; Orita, M. ; Sarukura, N. ; Hirano, M. ; Hosono, H.
Author_Institution :
Hosono Project of Transparent ElectroActive Mater., Japan Sci. & Technol. Corp., Kawasaki, Japan
Volume :
36
Issue :
11
fYear :
2000
fDate :
5/25/2000 12:00:00 AM
Firstpage :
984
Lastpage :
985
Abstract :
A UV-emitting diode composed of a hetero-SrCu2O2/ZnO pn junction was fabricated by pulsed laser deposition (PLD). On injecting an electrical current through a pn heterojunction of p-SrCu2O2/n-ZnO, an emission peak centred at 387 nm was observed, originating from excitons or the electron hole plasma in ZnO.
Keywords :
light emitting diodes; 387 nm; SrCu2O2-ZnO; UV-emitting diode; current injection; electron-hole plasma; exciton; p-n heterojunction; pulsed laser deposition; transparent oxide semiconductor;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000726
Filename :
849010
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1352443
بازگشت